Green Transistor - A V{sub}(DD) Scaling Path for Future Low Power ICs

摘要

IC power consumption is not only a package thermal issue but also a significant and fast growing part of the world electricity consumption. A new low voltage transistor could contribute greatly to the need for a new V{sub}(dd) scaling scenario. Green transistor (gFET) is based on tunneling and provides I{sub}(on) and I{sub}(off) far superior to MOSFET at 0.2V if suitable low-E{sub}g material is introduced into IC manufacturing.