Extraction efficiency improvement of GaN light-emitting diode using sub-wavelength nanoimprinted patterns on sapphire substrate

摘要

The sapphire substrate with sub-wavelength pattern pitch (200 nm) was fabricated by nanoimprint and has significantly enhanced the extraction efficiency of GaN LED (λ=450 nm) −80% more light out than the LEDs on flat sapphire substrate that grown in the same run and better than previously-reported micro-scale patterns.