Characterizing nanoimprint pattern cross-section and fidelity from x-ray reflectivity

摘要

To address several of the challenges associated with nanoimprint lithography, new measurement techniques that can correlate the physical structure of an imprinted nanostructure with the materials used and the imprinting conditions are critical for optimizing imprint processes. Specular X-ray reflectivity (SXR) is a widely used technique to quantify the thickness, density, and roughness of the non-patterned films. Here we extend the applicability of SXR to imprinted nanostructures by characterizing the pattern height, the line-to-space ratio as a function of pattern height, the residual layer thickness, and the fidelity of pattern transfer.