Impact of quantum mechanical effects on design of nano-scale narrow channel n- and p-type MOSFETs

摘要

The impact of quantum mechanical effects and device design guidelines in nano-scale narrow channel n-type and p-type MOSFETs is presented. Ultra-narrow channel MOSFETs with n- and p-type source/drain have been successfully fabricated and threshold voltage increase due to quantum confinement has been clearly observed in both n- and p-type devices. By analytical calculations, device design for threshold voltage adjustment in n- and p-type MOSFETs using quantum mechanical effects is discussed. The calculations also demonstrate that an ultra-narrow channel along the >100< direction has a large advantage in device design over the >110< direction due to higher mobility.