High-mobility Ga/sub 0.47/In/sub 0.53/As/InP heterostructure by atmospheric-pressure MOVPE using cyclopentadienyl indium

摘要

Lattice matched Ga/sub 0.47/In/sub 0.53/As/InP heterostructure was grown by an atmospheric-pressure MOVPE reaction system using monovalent cyclopentadienyl indium (C/sub 5/H/sub 5/In). The heterointerface characteristics were evaluated using double crystal X-ray diffraction method and wedge TEM technique. The reaction system gave /spl Delta/a/a=2.95/spl times/10/sup -4/ accompanied by a smooth mirror-like surface. The abrupt Ga/sub 0.47/In/sub 0.53/As/InP heterointerface was also given. The lattice matched heterostructure showed electron mobilities of /spl mu//sub 300 K/==12 700 cm/sup 2//Vs at n/sub s,300/ /sub K/=4.2/spl times/10/sup 11/ cm/sup -2/ and /spl mu//sub 77 K/=108 000 cm/sup 2//Vs at n/sub 2,77 K/=3.9/spl times/10/sup 11/ cm/sup -2/.