A Novel Approach to Amine-Thiol Molecular Precursors for Fabrication of High Efficiency Thin Film CISSe/CIGSSe Devices

摘要

A new approach is presented for solution-processing of thin film chalcogenide materials which utilizes amine-thiol chemistry in a novel and judicious manner. Using this new approach, CISSe and CIGSSe films were fabricated with complete prevention of the carbonaceous fine grain layer, which has been a persistent impurity in molecular precursor systems. Using the standard device architecture, total area (active area) efficiencies of up to 11.5% (12.6%) and 11.8% (12.9%) were achieved for the CISSe and CIGSSe systems, respectively.