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Effects of Substrate Structure on the Warpage of Flip Chip IC Packages

机译:基板结构对倒装芯片IC封装翘曲的影响

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Warpage after the encapsulation process is a big concern for the plastic IC packaging industry. Too large warpage in a package will cause serious problems, including lower package reliability and, difficulty with post encapsulation processes such as reflow, etc. Thus, accurate prediction of warpage after the encapsulation process is desirable and a number of research works have been done in this area. Most previous researchers have focused on thermal-induced warpage analyses considering only the effects of differences in the thermal expansion coefficients between constituent materials and have neglected cure-induced shrinkage effects. However, epoxy molding compound (EMC) is a thermosetting plastic material, and the colloids will cause volumetric shrinkage due to cure reactions after heating. Ignoring cure-induced volume change effects will cause miscalculations in the amount of warpage, so it is necessary to take into account cure-induced shrinkage in analyses. Therefore, volume shrinkage caused by both EMC cure and temperature effects are considered in this paper. A flip chip IC package is a package with a substrate. Most substrates in a flip chip IC are made of layers of printed wire board materials with different thermal expansion coefficients, such as FR4 or core material, Cu, green paint, and solder mask, etc. Therefore, it is also possible to observe volume shrinkage in a substrate due to cure and thermal effects. However, to simplify the problem, the degree of cure of the substrate is assumed to be fully cured during packaging, so cure-induced shrinkage of substrates is ignored in this paper. Only volume changes due to temperature effects are considered for the substrate. The analysis started with a mold filling simulation, and using the data for the package temperature and pressure, warpage simulations were executed. EMC properties were obtained using various standard test techniques. The Cross Castro-Macosko viscosity model was used in this paper. Kamal's cure kinetic model was also used, which was measured with a differential scanning calorimeter (DSC). Cureinduced volume changes were expressed with the P-V-T-C equation, which describes the relationship between changes in the cureinduced volume, degree of cure, pressure, and temperature. Determination of the coefficients in the P-V-T-C equation were done by combining the data from a P-V-T-C test machine and the cure kinetic model. Using the actual engineering applications to verify the feasibility of the analytical method, it was found that for a flip chip package, warpage analysis considering both cure and thermal-induced shrinkage is more accurate than that considering thermal expansion only. The results also showed that both the EMC cure shrinkage and substrate design play a significant role in warpage analyses for flip chip IC packages.
机译:封装过程后的翘曲是塑料IC封装行业的主要关注点。封装中的翘曲太大会引起严重的问题,包括封装可靠性降低以及后封装工艺(例如回流焊)的难度等。因此,希望在封装工艺之后准确预测翘曲,并且在封装工艺中已经进行了许多研究工作。这片区域。以前的大多数研究人员只考虑了组成材料之间热膨胀系数差异的影响,而只考虑了固化引起的收缩效应,因此只专注于热引起的翘曲分析。但是,环氧模塑化合物(EMC)是一种热固性塑料,由于加热后的固化反应,胶体会引起体积收缩。忽略固化引起的体积变化效应将导致翘曲量计算错误,因此在分析中必须考虑到固化引起的收缩。因此,本文考虑了由EMC固化和温度影响引起的体积收缩。倒装芯片IC封装是带有基板的封装。倒装芯片IC中的大多数基板都是由具有不同热膨胀系数的印刷线路板材料制成的,例如FR4或芯材,Cu,绿色涂料和阻焊剂等。因此,也可以观察体积收缩由于固化和热效应而在底材上的残留。但是,为简化该问题,假定基材的固化程度在包装过程中已完全固化,因此本文忽略了固化引起的基材收缩。对于衬底,仅考虑由于温度效应引起的体积变化。该分析从模具填充仿真开始,然后使用包装温度和压力数据进行翘曲仿真。使用各种标准测试技术获得了EMC性能。本文使用Cross Castro-Macosko粘度模型。还使用了Kamal的固化动力学模型,该模型是用差示扫描量热仪(DSC)测量的。用P-V-T-C方程表示固化引起的体积变化,该方程描述了固化引起的体积变化,固化程度,压力和温度之间的关系。通过将来自P-V-T-C测试机的数据与固化动力学模型相结合,可以确定P-V-T-C方程中的系数。通过实际的工程应用来验证该分析方法的可行性,发现对于倒装芯片封装,既考虑固化又考虑热引起的收缩的翘曲分析比仅考虑热膨胀的翘曲分析更为准确。结果还表明,EMC固化收缩率和基板设计在倒装芯片IC封装的翘曲分析中都起着重要作用。

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