The Application of the High-k Dielectrics in Lateral Double-Diffused Metal Oxide Semiconductor

摘要

Lateral Double-Diffused Metal Oxide Semiconductor (LDMOS) is widely used in power integrated circuits due to its advantages of high breakdown voltage, high current, and easy integration. The relationship between the breakdown voltage (BV) and the specific on-resistance (Ron,sp) is the main contradiction of the LDMOS. Researches show that the high-k dielectrics can effectively alleviate this contradiction. In this paper, the application of high-k dielectrics in LDMOS is classified and discussed. The different LDMOS structures are compared in terms of BV, Ron,sp and figure of merit (FOM). Meanwhile, the advantages and disadvantages of the high-k dielectrics are concluded for its application in LDMOS.