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Cascaded heterostructured a-Si/c-Si solar cell with increased current production

机译:级联异质结构a-Si / c-Si太阳能电池,电流产生增加

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In this study we present a cascaded solar cell with a heterostructure consisting of p-i-n-n-i-p regions. The detailed structure starts with the bottom layer of 0.01μm thin film p-doped (1017cm-3) c-Si, followed by 0.44μm thick intrinsic (c-Si) layer, covered by 0.1μm thin n-doped (1016cm-3) c-Si. Next floor of the cascaded structure consists of larger energy gap material which is designed to be 0.1μm thin n-doped (1016cm-3) a-Si, covered by 0.44μm thick intrinsic (a-Si) layer and followed at the top by p-doped (1017cm-3) a-Si of 0.01μm thickness. The described monolithic structure could be considered as a multi-junction solar cell with obvious advantages as compared to existing multi-junction solar devices. Most of the thickness of our device is occupied by intrinsic layers, were high generation of electron-hole pairs is not affected by intensive recombination processes. We avoid usage of tunneling interconnects, which do decrease the total current of the solar cell. The potential step at the energy diagram between thin layers of n-type of a-Si and n-type of c-Si is negligible, i.e. the collection of carriers from both p-n junctions through the common electrode is very efficient. In conventional stacked one above the other multi-junction cell the total current is equal to the smallest current of a junction in stack. In our design the two p-i-n structures are adding the currents due to common terminal created for the a-Si/c-Si n-type interface and due to wired together both p regions. The collected densities of current from amorphous cell and for crystalline counterpart are 19.87 mA/ cm2 each. The modeled built-in potential, i.e. open circuit voltage came out somewhat smaller than observed in stacked p-n junctions. In our case it is about 0.52V. However the modeling of this thin-film solar cell demonstrates higher efficiency compared to similar Si heterostructures. The filling factor of designed solar cell is FF= 0.80 and efficiency is 22.2%. The corrugated top of the solar cell increases the number of sun-hours by 30%.
机译:在这项研究中,我们介绍了一种具有由p-i-n-n-i-p区组成的异质结构的级联太阳能电池。详细的结构始于0.01微米薄膜p掺杂(1017cm-3)c-Si的底层,然后是0.44微米厚本征(c-Si)层,再覆盖有0.1微米薄n掺杂(1016cm-3)的本征(c-Si)层)c-Si。级联结构的下一层由较大的能隙材料组成,该材料被设计为0.1μm薄的n型掺杂(1016cm-3)a-Si,被0.44μm厚的本征(a-Si)层覆盖,然后在顶部依次是厚度为0.01μm的p掺杂(1017cm-3)a-Si。与现有的多结太阳能器件相比,所描述的单片结构可以被认为是具有明显优势的多结太阳能电池。我们器件的大部分厚度都被本征层占据,因为高电子空穴对的产生不受密集复合过程的影响。我们避免使用隧道互连,这确实会降低太阳能电池的总电流。在能量图上,n型a-Si薄层和n型c-Si薄层之间的电位阶差可以忽略不计,即从两个p-n结通过公共电极收集载流子非常有效。在一个在另一个多结单元上方的常规堆叠中,总电流等于堆叠中结的最小电流。在我们的设计中,由于为a-Si / c-Si n型接口创建了公共端子,并且由于将两个p区域连接在一起,所以两个p-i-n结构会增加电流。来自非晶电池和结晶电池的电流密度分别为19.87 mA / cm2。模拟的内置电势(即开路电压)比在堆叠的p-n结中观察到的要小一些。在我们的情况下,它约为0.52V。但是,与类似的Si异质结构相比,该薄膜太阳能电池的建模显示出更高的效率。设计的太阳能电池的填充系数为FF = 0.80,效率为22.2%。太阳能电池的波纹顶部使太阳时数增加了30%。

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