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Soft Errors: Reliability Challenges in Energy-Constrained ULP Body Sensor Networks Applications

机译:软误差:能量受限ULP体传感器网络应用中的可靠性挑战

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Aggressive technology and supply voltage scaling has led to increasing concern for reliability. Optimizing power and energy with sub-threshold (sub-V_T) operation exponentially increases the occurrences of both static and dynamic failures. With smaller node capacitances with each technology and supply scaling node, radiation-induced Single Event Upset (SEU) has become a critical design metric for Ultra-Low-Power (ULP) applications. In this paper, we explore the impact of radiation-induced soft errors on sub-threshold SRAM implemented in a Body Sensory Node (BSN) as an ULP application. We also demonstrate an exponential reduction in the critical charge (Q_(Crlt)) of a storage node with supply in near- and sub-V_T design, resulting in a significant design consideration for the low-power applications. The huge process variation in sub-V_T results in 3X Qcrit variation. Finally, we compare the trend of technology scaling and supply voltage scaling on Q_(Crlt).
机译:积极的技术和电源电压缩放导致了对可靠性的升高。使用子阈值(Sub-V_T)操作优化功率和能量指数增加了静态和动态故障的出现。具有较小的节点电容和每个技术和供应缩放节点,辐射引起的单一事件损坏(SEU)已成为超低功耗(ULP)应用的关键设计度量标准。在本文中,我们探讨了辐射诱导的软误差对体系节点(BSN)中实现的子阈值SRAM作为ULP应用的影响。我们还证明了存储节点的临界电荷(Q_(CRLT))的指数降低,具有近近和子V_T设计,导致低功耗应用的显着设计考虑因素。 Sub-V_T的巨大流程变化导致3倍QCRIT变化。最后,我们比较Q_(CRLT)的技术缩放和电源电压缩放的趋势。

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