BPPT - Bulk Potential Protection Technique for Hardened Sequentials

摘要

In this paper, we present a method for hardening memory and sequential cells against soft errors. The effect of the ionizing particle on the bulk potential is exploited to prevent the induced SET from propagating in the circuit. The proposed method requires a minimum number of extra transistors. The solution is applied to D Flip-Flop design, and alpha and heavy-ions test results are presented.