Thermal Laser Attack and High Temperature Heating on HfO_2-based OxRAM Cells

摘要

The last 10 years have seen the rise of new NVM technologies as alternative solutions to Flash technology, which is facing downsizing issues. Apart from offering higher performance than the state of the art of Flash, one of their key features is lower power consumption, which makes them even more suitable for the IoT era. But one of the other main concerns regarding IoT is data security, which is yet to be evaluated for emerging NVM. Our previous work aimed at putting under test the integrity of HfO_2 based resistive RAM (OxRAM cells). Bit-set occurrences were found after thermal laser attacks. This present work investigates the difference in behaviour when a selector is added to the resistive element, thanks to attack on different stacks. The results obtained give interesting tracks for the design of secure OxRAM-based ICs. It also studies the kinetic role of temperature through heating experiments.