A novel Partial SOI power device with step in buried oxide for improvement of breakdown voltage

摘要

In this paper a new design for conventional Partial SOI (PSOI) structure is proposed, which employs a step in buried oxide of the partial SOI structure. This new structure is called step partial buried oxide structure (SPBOS). The step in the buried oxide produces an additional electric field peak, which decreases the other electric field peaks near the drain and source junctions drastically. Our analysis indicates that the breakdown voltage of SPBOS may be increased by 4–5 times in comparison to conventional SOI.