Accelerated Degradation Testing of Driver IC based on Constant Humidity Stress

摘要

In this paper, we performed accelerated degradation testing (ADT) of a certain type of driver IC under different humidity stress levels. We keep the drivers in storage under same temperature but different humidity; measure the determined sensitive parameter of the driver with fixed time interval, then model the degradation path to obtain the pseudo-failure lifetime. Finally, we analyze the test data by using a power-law equation, extrapolate storage lifetime of the driver IC under normal temperature and humidity stress level.