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Design of a 0.13μm CMOS Front-end for 4.5-5.5GHz Radar Sensor Chip

机译:4.5-5.5GHz雷达传感器芯片设计0.13μmcmos前端

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This paper addresses the problem of 4.5-5.5GHz direct-conversion front-end design in a SOC-based radar sensor chip for vital signal detection. The front-end is characterized by a broadband low noise amplifier (LNA) and a PMOS switching-type double-balanced mixer. The LNA and the mixer co-design introduces both noise cancellation topology and linearization technology, obtaining input matching, noise suppression and IIP3 enhancement simultaneously at carried 5GHz. The current density of the transconductance stage is dictated transcendentally, and ensured by thermal robustness bias circuitry. Stack bias circuitry is considered to suppress flicker noise. The maximum conversion gain (CG), IIP3 and minimum double-sideband noise figure is 20.7dB, 8.58dBm, 7.9dB, respectively. The voltage control oscillator (VCO) is tunable between 4.5-5.5GHz with phase noise below -120dBc/Hz at 1MHz offset. The best phase noise at 1MHz offset is -132dBc/Hz, given that the front end consumes 40mW from 1.2V supply.
机译:本文解决了4.5-5.5GHz直接转换前端设计的基于SOC的雷达传感器芯片的问题,用于重要信号检测。前端的特点是宽带低噪声放大器(LNA)和PMOS开关式双平衡混频器。 LNA和混频器共同设计引入了噪声消除拓扑和线性化技术,在携带5GHz时同时获得输入匹配,噪声抑制和IIP3增强。跨导级的电流密度超越,并通过热稳健性偏置电路确保。堆叠偏置电路被认为是抑制闪烁的噪声。最大转换增益(CG),IIP3和最小双边带噪声图分别为20.7dB,8.58dBm,7.9dB。电压控制振荡器(VCO)在4.5-5.5GHz之间可调谐,其相位噪声低于-120dBc / Hz,在1MHz偏移量下。 1MHz偏移的最佳相位噪声是-132dBc / hz,因为前端从1.2V电源消耗40mW。

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