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Use of diodes to enable #x03BC;Loop#x00AE; test structures for buried defects and voltage to grayscale calibration

机译:使用二极管以使μloop®测试结构用于掩埋缺陷和电压到灰度校准

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Two test structures that address key problems for voltage contrast inspection are introduced. These structures both utilize diodes to provide unique capability. The first structure illustrates how a two-pass area accelerated inspection can be used for detection of buried defects such as gate shorts or via opens. Like standard μLoop® test structures, the first inspection pass is able to detect the existence of all the defects affecting the structure while only scanning a small fraction of the structure. The purpose of the second inspection pass is to look for physical signs of the defect, but none are generally visible for buried defects. The key to this structure is that diodes are used to indicate the location of the buried defect. The second structure is used to map voltage to grayscale. This structure takes advantage of the well-known fact that there is a 0.6V drop across a forward biased diode.
机译:引入了两个测试结构,解决了用于电压对比检查的关键问题。这些结构都利用二极管提供独特的能力。第一结构示出了双通区域加速检查如何用于检测诸如栅极短路或通孔的掩埋缺陷。与标准μloop®测试结构一样,第一检查通过能够检测到影响结构的所有缺陷的存在,同时仅扫描结构的一小部分。第二种检验通行证的目的是寻找缺陷的物理迹象,但是埋藏缺陷通常都是可见的。该结构的关键是使用二极管来指示埋地缺陷的位置。第二结构用于将电压映射到灰度。该结构利用众所周知的事实,即前向偏置二极管存在0.6V下降。

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