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Rapid Formation of Intermetallic Joints with Sn/Metal Composite Alloys by Ultrasonic-assisted Soldering for High-temperature Chip Attachment

机译:通过超声波辅助焊接对高温芯片附件的超声波辅助焊接快速形成金属间接头用SN /金属复合合金

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With the dramatic requirements of high power and high integrity in field of power devices, the study of novel interconnection materials and packaging methods has been paid an extremely attention. Presently, the most candidates for the chip bonding are Zn-based, Bi-based, noble-metal-based (such as Au-Sn, Au-Ge, Au-Si), nano-metal particles (Ag or Cu nanoparticles) and transient-liquid-phase (TLP) bonding. However, a high bonding temperature and poor ductility for Zn-based solder (more than 420°C) causing irreversible damages or accelerated aging affects to the electronic devices; Bi-based solder alloys are still under way mainly due to their inferior thermal and electrical conductivity as well as poor workability; It's worth noting that nano-silver sintering and TLP bonding technology have been proven to be the potential solutions to the power electronic packaging, because their processing temperatures are relatively low and the produced joints are of high re-melting temperatures. However, Ag is expensive and easy to electromigration, which will influence the stability/reliability of the joints and hinder to universal industry applications. For the TLP bonding, the process to produce full intermetallic compounds (IMCs) is time-consuming, commonly more than 60 min, due to relatively low reaction velocity. To solve the problem of time-consuming of the TLP, an enhanced and low-cost auxiliary energy is necessary. Ultrasonic-assisted soldering has been proven able to solder dissimilar metals at low temperatures within a very short time. In our previous work, a full Cu6Sn5/Cu3Sn IMCs joint through TLP assisted by ultrasound was obtained. Because of the acoustic cavitation and streaming effect created by ultrasonic waves propagating in molten alloys, the atom diffusion and physical-chemical interactions were accelerated at the liquid/solid interfaces. However, a sole IMC joint with single phase has not been fabricated so far. High re-melting temperature joint consisted of nearly sole Ni_3Sn_4 with a high shear strength of 43.4 MPa was achieved with Sn-24 wt.%Ni by ultrasonic-assisted soldering for 10 s. This rapidly formed intermetallic joint was phase-stable as isothermally aged at 300 °C for 72 h in air and its shear strength was 33.4 MPa due to the Ni_3Sn_4 grains coarsening. These results demonstrate that the less time-consuming ultrasonic-assisted soldering has wide potentials for high-temperature power electronic packaging.
机译:随着电力设备领域的高功率和高完整性的戏剧性要求,对新型互连材料和包装方法的研究得到了极大的注意。目前,芯片键合的最多候选者是Zn基,基于Bi-Mall-Metal的(例如Au-Sn,Au-Ge,Au-Si),纳米金属颗粒(Ag或Cu纳米粒子)和瞬态 - 液相(TLP)键合。然而,对于Zn基焊料(超过420℃)的高键合温度和较差的延展性,导致不可逆的损坏或加速老化对电子设备影响;双基焊料合金仍然是由于其劣势和导电性以及可加工性差;值得注意的是,已被证明纳米银烧结和TLP键合技术是电力电子包装的潜在解决方案,因为它们的加工温度相对较低,所产生的接头具有高熔化的温度。然而,AG昂贵且易于电迁移,这将影响关节的稳定性/可靠性和阻碍通用行业应用。对于TLP键合,由于相对低的反应速度,产生完整的金属间化合物(IMC)的方法是耗时的,通常大于60分钟。为了解决TLP耗时的问题,需要增强和低成本的辅助能量。已经证明超声波辅助焊接能够在很短的时间内在低温下焊接异种金属。在我们之前的工作中,获得了通过超声波辅助TLP的全CU6SN5 / CU3SN IMCS接头。由于通过在熔融合金中传播的超声波产生的声学空化和流动效果,因此在液体/固体界面上加速原子扩散和物理化学相互作用。然而,到目前为止还没有制造单相的唯一IMC关节。高再熔化温度接头由近底部的Ni_3SN_4组成,通过SN-24重量%,通过超声波辅助焊接实现了43.4MPa的高剪切强度为43.4MPa。在空气中在300℃下在300℃下在300℃下进行相稳定的金属间接头,其剪切强度为33.4MPa,由于Ni_3SN_4籽粒粗化。这些结果表明,消耗较少的超声波辅助焊接具有宽的高温电力电子包装潜力。

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