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A radiation resistant library based on DICE and fault-tolerant delay filtering techniques in CMOS 0.18μm technology

机译:基于CMOS0.18μm技术的骰子和容错延迟滤波技术的辐射抗性库

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A radiation resistant standard cell library is completed based on SMIC 0.18 μm technology in this paper. Standard cell library includes combinatorial logic cells and sequential logic cells. SET (Single Event Transient) effect always occurs in combinatorial logic cells, and SEU (Single Event Upset) effect always occurs in sequential logic cells. SEL(Single Event Latchup) and TID(Total Ionizing Dose) effects affect all logic cells. According to radiation effects, logic cells in the standard cell library are designed with harden methods at the circuit level and the layout level. Combination logic cells adopt fault-tolerant delay filtering method in circuit level, and sequential logic cells use DICE structure in circuit design. A guard ring has been added to the layout design for the SEL and TID effects. Then physical information and timing information are extracted for all cells, and the library building process is completed. Finally we use EDA tools to verify the availability of the anti-radiation library.
机译:本文基于SMIC0.18μm技术完成辐射标准电池库。标准单元库包括组合逻辑单元和顺序逻辑单元。 SET(单事件瞬态)效果始终发生在组合逻辑单元中,并且SEU(单事件损坏)效果始终发生在顺序逻辑单元中。 SEL(单事件锁存器)和TID(全电离剂量)效应影响所有逻辑单元。根据辐射效应,标准电池库中的逻辑单元在电路电平和布局水平处设计了硬化方法。组合逻辑单元采用电路电平的容错延迟滤波方法,顺序逻辑单元使用电路设计中的骰子结构。保护戒指已添加到SEL和TID效果的布局设计中。然后针对所有小区提取物理信息和定时信息,并且完成库构建过程。最后,我们使用EDA工具来验证防辐射库的可用性。

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