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THz radiation from GaAs surfaces with metallic nano-dot arrays under optical excitation

机译:带有金属纳米点阵列的GaAs表面在光激发下的THz辐射

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摘要

We present characteristics of THz radiation from GaAs wafers with metallic nano-dot arrays under optical excitation. Periodic arrays of metallic nano-dots were introduced by a nano-imprinting technique. We found that the metallic nano-dot arrays can make the bandwidth of THz radiation from GaAs surfaces narrow.
机译:我们介绍了在光激发下具有金属纳米点阵列的GaAs晶片的THz辐射特性。通过纳米压印技术引入金属纳米点的周期性阵列。我们发现金属纳米点阵列可以使GaAs表面的THz辐射带宽变窄。

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