首页> 美国政府科技报告 >Monolithic Two-Dimensional Surface-Emitting Strained-Layer InGaAs/AlGaAs andAlInGaAs/AlGaAs Diode Laser Arrays with over 50% Differential Quantum Efficiencies

【24h】

Monolithic Two-Dimensional Surface-Emitting Strained-Layer InGaAs/AlGaAs andAlInGaAs/AlGaAs Diode Laser Arrays with over 50% Differential Quantum Efficiencies

机译：单片二维表面发射应变层InGaas / alGaas和alInGaas / alGaas二极管激光器阵列，具有超过50％的差分量子效率

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

No abstract available.

著录项

作者
Goodhue, W. D.; Donnelly, J. P.; Wang, C. A.; Lincoln, G. A.; Rauschenbach, K.;
展开▼
作者单位

展开▼
年度 1991
页码
总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Semiconductor lasers; Arsenides; Infrared lasers; Reprints;

机译：半导体激光器;砷化物;红外激光器;重印;

相似文献

外文文献
中文文献
专利

1. CW operation of monolithic arrays of surface-emitting folded-cavity InGaAs/AlGaAs diode lasers [J] . Donnelly J.P., Goodhue W.D. IEEE Photonics Technology Letters . 1993,第7期

机译：表面发射折叠腔InGaAs / AlGaAs二极管激光器的单片阵列的CW操作
2. Uniform linear arrays of strained-layer InGaAs-AlGaAs quantum-well ridge-waveguide diode lasers fabricated by ECR-IBAE [J] . Woodhouse J.D., Wang C.A. IEEE Journal of Quantum Electronics . 1995,第8期

机译：由ECR-IBAE制造的应变层InGaAs-AlGaAs量子阱脊波导二极管激光器的均匀线性阵列
3. Coherent two-dimensional surface-emitting arrays of strained InGaAs/AlGaAs quantum-well lasers [J] . Bour D.P., Evans G.A. IEEE Transactions on Electron Devices . 1989,第11期

机译：应变InGaAs / AlGaAs量子阱激光器的相干二维表面发射阵列
4. Fabrication Of Monolithic Two-dimensional Surface-emitting Strained-layer InGaAs/AiGaAs And AllnGaAs/AiGaAs Diode-laser Arrays With Over 50 Differential Quantum Efficiencies [C] . Goodhue, W.D., Donnelly, . 2001

机译：具有超过50％的差分量子效率的二维二维表面发射应变层InGaAs / AiGaAs和AllnGaAs / AiGaAs二极管激光器阵列的制备
5. Quantum efficiency enhancement for GaN based light-emitting diodes and vertical cavity surface-emitting lasers. [D] . Zhang, Fan. 2014

机译：GaN基发光二极管和垂直腔表面发射激光器的量子效率增强。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Passive Mode-Locking of Monolithic InGaAs/AlGaAs Double Quantum Well Lasers at 42GHz Repetition Rate [O] . Sanders S., Eng L., Yariv A. 1990

机译：42GHz重复频率的单片InGaAs / AlGaAs双量子阱激光器的无源锁模
8. High Quantum Efficiency Monolithic Arrays of Surface-Emitting AlGaAs Diode Laserswith Dry-Etched Vertical Facets and Parabolic Deflecting Mirrors. (Reannouncement with New Availability Information) [R] . Donnelly, J. P., Goodhue, W. D., Bailey, R. J., 1992

机译：具有干蚀刻垂直面和抛物面偏转镜的表面发射alGaas二极管激光器的高量子效率单片阵列。（重新公布新的可用性信息）

Monolithic Two-Dimensional Surface-Emitting Strained-Layer InGaAs/AlGaAs andAlInGaAs/AlGaAs Diode Laser Arrays with over 50% Differential Quantum Efficiencies

摘要

著录项

相似文献

相关主题

期刊订阅