首页> 外国专利> an image forming apparatus including surface-emitting laser array surface-emitting laser element, with it, a surface-emitting laser array, optical pickup apparatus equipped with a surface-emitting laser array or surface-emitting laser element, surface emitting laser array or surface-emitting laser element optical communication system with a surface-emitting laser array or surface-emitting laser element and the optical transceiver module with optical transmitter module with a surface-emitting laser array or surface-emitting laser element.

an image forming apparatus including surface-emitting laser array surface-emitting laser element, with it, a surface-emitting laser array, optical pickup apparatus equipped with a surface-emitting laser array or surface-emitting laser element, surface emitting laser array or surface-emitting laser element optical communication system with a surface-emitting laser array or surface-emitting laser element and the optical transceiver module with optical transmitter module with a surface-emitting laser array or surface-emitting laser element.

机译:一种图像形成装置,其包括表面发射激光器阵列,表面发射激光器元件,表面发射激光器阵列,配备有表面发射激光器阵列或表面发射激光器元件的光学拾取装置,表面发射激光器阵列或表面具有表面发射激光器阵列或表面发射激光器元件的发射激光器元件光通信系统,以及具有表面发射激光器阵列或表面发射激光器元件的光发射器模块的光收发器模块。

摘要

PROBLEM TO BE SOLVED: To provide a surface light emitting laser element capable of high outputting.;SOLUTION: The surface light emitting element is provided with resonator spacer layers 103, 105 and an active layer 104. The active layer 104 contacting the resonator spacer layers 103, 105 between the resonator spacers 103, 105 is formed. The resonator spacer layer 103 consists of Ga0.5In0.5P that lattice matches. The active layer 104 consists of a quantum well structure where well layers 104B, 104D, 104F consisting of GaInPAs and barrier layers 104A, 104C, 104E, 104G consisting of Ga0.5In0.5P are alternately laminated. The resonator spacer layer 105 consists of (Al0.7Ga0.3)0.5In0.5P.;COPYRIGHT: (C)2007,JPO&INPIT
机译:解决的问题:提供一种能够提供高输出的表面发光激光器元件;解决方案:该表面发光元件设置有谐振器隔离层103、105和有源层104。有源层104与谐振器隔离层接触在谐振器间隔物103、105之间形成103、105。谐振器间隔层103由晶格匹配的Ga 0.5 In 0.5 P组成。有源层104由量子阱结构组成,其中由GaInPA组成的阱层104B,104D,104F和由Ga 0.5 In 0.5 P交替层压。谐振器间隔层105由(Al 0.7 Ga 0.3 0.5 In 0.5 P.; COPYRIGHT:( C)2007,日本特许厅

著录项

  • 公开/公告号JP5224155B2

    专利类型

  • 公开/公告日2013-07-03

    原文格式PDF

  • 申请/专利权人 株式会社リコー;

    申请/专利号JP20060250384

  • 发明设计人 佐藤 俊一;

    申请日2006-09-15

  • 分类号H01S5/183;

  • 国家 JP

  • 入库时间 2022-08-21 16:57:12

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号