Temperature Dpendent Carrier Dynamics of InAs/GaAs Quantum Dots Probed by Terahertz Time-Domain Spectroscopy

摘要

We have utilized the terahertz time-domain spectroscopy to investigate the temperature dependent carrier dynamics n-type modulation-doped InAs/GaAs quantum dots and estimated the total number of electrons captured by the quantum dots from 10 K to 290 K. The absorption of the sample with quantum dots decrease monotonically as the temperature is lowered because quantum dots capture more free carriers at lower temperatures, while the absorption of the sample without quantum dots is the highest at 100 K because the electron mobility is the highest at that temperature.