High-Quality Surface Passivation Obtained by High-Rate Deposited Silicon Nitride, Silicon Dioxide and Amorphous Silicon using the Versatile Expanding Thermal Plasma Technique

摘要

The expanding thermal plasma (ETP) is a novel plasma technique currently used by several solar cell manufacturers for the deposition of silicon nitride antireflection coatings on (multi-) crystalline silicon solar cells. In this paper we will show that the ETP technique is versatile and can be used for the deposition of silicon nitride, silicon dioxide and hydrogenated amorphous silicon with a good level of surface passivation. In this way the ETP technique can meet the future PV demands with respect to the decrease in wafer thickness and the use of n-type material that requires good electrical and optical quality thin films at both the front and the back side of the solar cell