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Room temperature CW Operation of a GaInAs/GaInAsP/InP SCH Laser with Quantum-Wire Size Active Region

机译：具有量子线尺寸有源区的GaInAs / GaInAsP / InP SCH激光器的室温CW操作

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A room temperature CW operation of a GaInAs/GaInAsP/InP SCH quantum-wire laser with 5nm thick and 10-30nm wide vertically stacked triple-wire active region was achieved by using 2-step LP-OMVPE growth on p-type InP substrate, to increase the hole injection efficiency, and direct writing by an electron beam exposure followed by wet chemical etching.

机译：通过在p型InP衬底上进行两步LP-OMVPE生长，实现了具有5nm厚和10-30nm宽垂直堆叠三线有源区的GaInAs / GaInAsP / InP SCH量子线激光器的室温CW操作，以提高空穴注入效率，并通过电子束曝光直接写入，然后进行湿法化学蚀刻。

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《》|1992年|P.234-235|共2页
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Miyake; Y.; Hirayama; H.;
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中图分类无线电电子学、电信技术;
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专利

1. Room-temperature operation of GaInAs/GaInAsP/InP SCH lasers with quantum-wire size active region [J] . Miyake Y., Hirayama H. IEEE Journal of Quantum Electronics . 1993,第6期

机译：具有量子线尺寸有源区的GaInAs / GaInAsP / InP SCH激光器的室温工作
2. Room temperature operation of GaInAs-GaInAsP-InP SCH multiquantum-film laser with narrow wire-like active region [J] . Miyake Y., Hirayama H. IEEE Photonics Technology Letters . 1991,第3期

机译：窄线状有源区的GaInAs-GaInAsP-InP SCH多量子膜激光器的室温工作
3. Room temperature CW operation of Ga/sub 0.3/In/sub 0.7/As/GaInAsP/InP strained MQW lasers with wire active region [J] . Kudo K., Miyake Y. IEEE Photonics Technology Letters . 1992,第10期

机译：Ga / sub 0.3 / In / sub 0.7 / As / GaInAsP / InP应变MQW激光器在室温下连续工作
4. Room temperature CW Operation of a GaInAs/GaInAsP/InP SCH Laser with Quantum-Wire Size Active Region [C] . Miyake Y., Hirayama H., Institute of Electric and Electronic Engineer IEEE International Semiconductor Laser Conference . 1992

机译：使用量子线尺寸有源区域的GAINAS / GAISASP / INP SCH激光器室温CW操作
5. GaInAsP/InP Organo-Metallic Vapor Phase Epitaxy (OMVPE) for Quantum Box Lasers [D] . 宮本恭幸. 1988

机译：用于量子盒激光器的GaInAsP / InP有机金属气相外延（OMVPE）
6. Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers [O] . Marcin Motyka, Grzegorz Sęk, Krzysztof Ryczko, 2015

机译：II型InAs / GaInAsSb量子阱中的界面混合设计用于中红外发射带间级联激光器的有源区域
7. A GaInAsP/InP Vertical Cavity Surface Emitting Laser for 1.5m operation [O] . R. Sceats, N. Balkan, M. J. Adams, 2015

机译：用于1.5m工作的GaInasp / Inp垂直腔面发射激光器
8. High-Temperature cw Operation of GaInAs/InP Lasers Emitting at 1.5 micrometers [R] . Hsieh, J. J. 1980

机译：GaInas / Inp激光器的高温cw操作发射1.5微米

Room temperature CW Operation of a GaInAs/GaInAsP/InP SCH Laser with Quantum-Wire Size Active Region

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