Coherent high-power operation of InGaAsP/InGaAs multiple-quantum-well active-grating surface-emitting amplified lasers

摘要

Abstract: ign and operating characteristics of strained-layer InGaAsP/InGaAs active-grating surface-emitting amplified diode lasers are presented. For the first time, we report cw operation of an active-grating amplifier at a single wavelength of 1.7 $mu@m with a cw power output in excess of 100 mW. In addition, we discuss, theoretically, the possibility of laterally scaling these devices using antiguided laser-array structures.!26