High-Power Growth-Robust InGaAs/InAlAs Terahertz QuantumCascade Lasers

摘要

We report on high-power terahertz quantum cascade lasers based on low effective electron mass InGaAs/InAlAs semiconductor heterostructures with excellent reproducibility. Growth-related asymmetries in the form of interface roughness and dopant migration play a crucial role in this material system. These bias polarity dependent phenomena are studied using a nominally symmetric active region resulting in a preferential electron transport in the growth direction. A structure based on a three-well optical phonon depletion scheme was optimized for this bias direction. Depending on the sheet doping density, the performance of this structure shows a trade-off between high maximum operating temperature and high output power. While the highest operating temperature of 155 K is observed for a moderate sheet doping density of 2 × 10¹⁰ cm^–2, the highest peak output power of 151 mW is found for 7.3 × 10¹⁰ cm^–2. Furthermore, by abutting a hyperhemispherical GaAs lens to a device with the highest doping level a record output power of 587 mW is achieved for double-metal waveguide structures.