Ultra Shallow GaAs Sidewall Tunnel Junctions Implemented with Low-temperature Area Selective Regrowth

摘要

Low temperature (290℃) area selective regrowth by molecular layer epitaxy (MLE) was applied for the fabrication of ultra shallow sidewall GaAs tunnel junctions with the junction depth of 49nm. The tunnel junctions have shown the record peak current density (J_p) up to 31000A/cm~2 and negative differential conductance of -1.4 x 10~(-5) S at 100 μm long strip structure. The mechanisms of strong sidewall orientation depend-ences of J_p are discussed.