ANNEALING METHOD, ULTRA-SHALLOW JUNCTION LAYER FORMING METHOD AND ULTR-SHALLOW JUNCTION LAYER FORMING DEVICE

摘要

An annealing method for annealing an impurity-introduced substrate, comprising the recrystallizing step of heat treating a substrate at a substrate temperature low enough not to activate the impurities introduced into the substrate so as to bring the substrate into a thermal equilibrium to thereby recrystallize atoms constituting the substrate, and, after the recrystallizing step, the electromagnetic wave irradiation step of irradiating the substrate with an electromagnetic wave having a specified frequency band so as to excite directly the lattice vibration (phonon) of the atoms for the purpose of activating the impurities in a thermal non-equilibrium with the substrate kept at a sufficiently low temperature.