ANALYSIS OF PINMARK INDUCED DEFECTS AFTER RTP

摘要

The establishment of the radiation equilibrium between wafer and support in an RTP chamber plays an important role in avoidance of slipline generation. A defined 1200℃ model process was used to evaluate the influence of the wafer support arrangement on local defect generation at the support points. The non-destructive scanning infrared depolarization technique (SIRD) was applied for slipline and stress evaluation. Micro-cleaved cross-sections of the pin marks identified plastic deformation surrounded by dislocation networks as source of the local stress fields. Photoluminescence heterodyne imaging (PLH) showed the influence of a backside pinmark on electrical parameters on the wafer frontside. A model for the effects found on both back and front sides will be discussed.