Annealing effects of ZnO films deposited on (0001) A1_2O_3 and (111) Si substrate by RF sputtering and GaN layer grown on ZnO films used as buffer layer by MOCVD

摘要

We investigated the crystal properties of ZnO deposited on (111) Si and c-Al_2O_3 substrates by RF sputtering with various thermal annealing temperatures and thick GaN layers grown on ZnO films used as buffer layer by MOCVD. To improve the quality of thick GaN films, we utilized LT-GaN buffer layers on ZnO/(111) Si and ZnO/c-Al_2O_3 substrates and investigated the effect of LT-GaN buffer layers on the properties of thick GaN. LT-GaN buffer layers were grown at 510 ℃ to 830 ℃ for 10 min. The crystalline and optical properties of thick GaN grown on ZnO/(111) Si and ZnO/c-Al_2O_3 substrate were affected by the LT-GaN buffer layer growth temperature.