Development of a 2'-AlGaN/GaN HEMT technology on sapphire and SiC for mm-wave high-voltage power applications

摘要

The suitability of AlGaN/GaN HEMTs on SiC is discussed with respect to mm-wave applications at 40 GHz and beyond. A 0.15 μm T-gate AlGaN/GaN-HEMT 2-inch technology on SiC and sapphire was developed for high power applications and for frequencies beyond 30 GHz. Large periphery devices with 0.48 mm gate width show a cw output power of 0.86 W at 40 GHz. AlGaN/GaN dual-gate HEMTs show MSG/MAG of > 13 dB at 60 GHz with 0.15 μm gate length.