PZT Thin Films by Radio Frequency Magnetron Sputtering

摘要

Pb (Zr_x Ti_(1-x)) O_3 (or PZT) thin films have been deposited on [110] LiTaO_3 single crystal substrates by radio frequency magnetron sputtering using a ceramic target with excess PbO. Highly oriented [101] PZT thin films were obtained when the as-deposited thin films were annealed at 650deg C for 60 min in an oxygen ambient, and a well-developed grain structure was formed. The optical properties of these thin films were also studied.