100 V class multiple stepped oxide field plate trench MOSFET (MSO-FP-MOSFET) aimed to ultimate structure realization

摘要

For low-voltage power MOSFETs technology, Field Plate (FP) and Superjunction (SJ) structures have been applied to reduce on-resistance drastically. As one of the approach for the ultimate structure realization, we propose a multiple stepped oxide FP-MOSFET (MSO-FP-MOSFET) that is extremely close to ideal gradient oxide structure. We have validated an optimum device structure by TCAD simulation and achieved lowest on-resistance of 28.5 mΩmm at breakdown voltage of 115.2 V. This performance indicates 25 % improvement compared to conventional devices. Moreover, to demonstrate the MSO-FP-MOSFET characteristics for the first time, we present some measurement data of TEG samples.