Compact modeling and analysis of the Partially-Narrow-Mesa IGBT featuring low on-resistance and low switching loss

机译：具有低导通电阻和低开关损耗的部分窄台面IGBT的紧凑建模和分析

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A compact model for the Partially-Narrow-Mesa (PNM) IGBT is developed. The model reproduces the measured specific feature of a substantial collector current enhancement. Simulated switching characteristics are also verified to reproduce the measurement data. It is further demonstrated that a small switching-loss increase in the studied IGBT structure is overcompensated by the conduction-loss reduction, resulting in reduction of the total loss in comparison to the conventional IGBT structure.

机译：开发了部分窄台面（PNM）IGBT的紧凑模型。该模型重现了集电极电流增强的实测特定特征。还验证了模拟的开关特性，以重现测量数据。进一步证明，所研究的IGBT结构中的小开关损耗增加被传导损耗的减小过度补偿，与传统的IGBT结构相比，导致总损耗的减小。

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《Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs》|2015年|101-104|共4页
会议地点 Hong Kong(CN)
作者
Miyaoku Yosuke; Matsuura Kai; Saito Atsushi; Kikuchihara Hideyuki; Mattausch Hans Jurgen; Miura-Mattausch Mitiko; Ikoma Daisaku; Yamamoto Takao;
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Grad. Sch. of Adv. Sci. of Matter Hiroshima Univ. Higashi-Hiroshima Japan;

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IGBT; compact model; injection enhancement PNM-IGBT; switching loss; switching performance;

机译：IGBT;紧凑型注入增强PNM-IGBT;开关损耗开关性能;

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4. Compact modeling and analysis of the Partially-Narrow-Mesa IGBT featuring low on-resistance and low switching loss [C] . Miyaoku Yosuke, Matsuura Kai, Saito Atsushi, Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs . 2015

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Compact modeling and analysis of the Partially-Narrow-Mesa IGBT featuring low on-resistance and low switching loss

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