High Gain, Widebandwidth and Low PowerTransimpedance Amplifier Using DTMOS Transistor

摘要

This research paper details the DTMOS transistor method to enhance the bandwidth of the transimpedance amplifier. The proposed TIA is based on boosting the trans conductance of a MOS transistor using a composite transistor configuration with a higher significance of transconductance than the regular DTMOS. This methodology is anchored by a design in a $0.18mu mathrm{m}$ CMOS innovation. The photodiode has a capacitance of 200fF, which permits the TIA to achieve a wide bandwidth of 2.6GHz. It is seen that the proposed TIA provides transimpedance gain of 56. 5 $mathrm{d}mathrm{B}Omega$ and input inferred noise-Current Spectral Density of $8mathrm{p}mathrm{A}/sqrt{mathrm{H}mathrm{z}}$ and the mean group-delay fluctuation is 4ps through the 3-dB bandwidth. The power consumption is recorded at 1.1mW from a 1.8V supply.