Ultralow-Noise Figure and High Gain Ku-Band Bulk CMOS Low-Noise Amplifier With Large-Size Transistor

摘要

This letter presents a fully integrated Ku -band low-noise amplifier (LNA) with a large-size transistor using 65-nm bulk complementary metal–oxide–semiconductor (CMOS) technology. To achieve an ultralow-noise figure, an optimization methodology balancing the ON-chip gate inductor and the parasitic capacitance of the large-size device is introduced. Using a voltage supply of 1 V, the proposed LNA has a 1.66-dB noise figure and 32.48-dB gain and, thus, outperforms other reported Ku -band bulk CMOS LNAs in these two respects. The LNA achieves the highest figure of merit I among reported Ku -band CMOS, silicon germanium, and gallium arsenide hetero-junction bipolar transistor LNAs. The LNA consumes a dc power of 22 mW and occupies a core area of $0.58,,{imes },,0.43,,{ext {mm}}^{2}$ .