RF LDMOS Power Amplifier Integrated Circuit for W-CDMA/TD-SCDMA applications

摘要

This article presents an LDMOS power amplifier integrated circuit for W-CDMA/TD-SCDMA applications. The IC has been developed in Infineon's Si LDMOS IC technology. The gain achieved was 27 dB. When tuned for TD-SCDMA, the IC showed SO W PEP at IM3 = -30 dBc (two-tone). When tuned for W-CDMA, it showed 40 W PEP at IM3 = -30 dBc (two-tone) and 400 MHz bandwidth (20%) around 2100 MHz. The PA IC has been characterized under all typical modulation formats, and is included in Infineon's product portfolio of power Ics for radio base stations.