Linearised HBT MMIC power amplifier with partially RF coupled active bias circuit for W-CDMA portable terminals applications

摘要

A highly linear MMIC power amplifier for wideband code-division multiple-access (W-CDMA) portable terminals has been devised and implemented with a new integrated on-chip lineariser. The proposed lineariser, consisting of an InGaP/GaAs heterojunction bipolar transistor (HBT) active bias circuit partially coupled to RF input power together with a feedback capacitor, effectively improves gain compression with little insertion power loss and no additional die area. The optimised lineariser improves maximum output power (P1 dB) by 2 dB and adjacent channel leakage power ratio (ACLR) by 4 dB, and the implemented HBT MMIC power amplifier exhibits a P1 dB of 30 dBm, a power gain of 30 dB, a power added efficiency of 42% at the maximum output power under an operation voltage of 3.4 V, and an ACLR of -34 dBc at 27 dBm of output power.