Harmonic Distortion Characterization of SOI MOSFETs

摘要

Harmonic Distortion (HD) of Partially and Fully Depleted Silicon-on-Insulator nMOSFETs is investigated through DC and Radio-Frequency (RF) characterization methods. Those techniques are compared and it demonstrates that in saturation, HD is dominated by the DC current-voltage characteristics and that the output conductance has to be taken into account. Accurate evaluation of HD at RF requires further measurements.