A Globally-Continuous, Charge-Conservative, Non-linear Equivalent Circuit Model For RF MOSFETs

摘要

A non-linear equivalent circuit model for MOSFETs valid for DC, small and large-signal simulations of high frequency circuit design is presented. The model is valid for a wide range of bias conditions and is globally continuous. Capacitances are derived from a single charge model and charge conservation is taken into account. Simulations of the model, following parameter extraction, are validated by comparisons with experimental data.