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Baseline particle reduction of downstream oxide etchers etching contacts and vias

机译:下游氧化物蚀刻器蚀刻触点和过孔的基线颗粒减少

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In the process of etching contact and via openings with a downstream oxide etcher, plasma etch byproducts form polymer that collects on process chamber components. Polymer build up over time will begin to separate from chamber components and deposit on the wafer, blocking the etch and creating incomplete contact and via openings, which result in device failure. When this phenomena occurs, complete disassembling and cleaning of the chamber (wet clean) is required before particle levels are acceptable again for processing wafers. Over half of the time wet cleans are performed at or before 1500 wafers processed.
机译:在蚀刻与下游氧化物刻蚀机的接触和通孔的过程中,等离子体蚀刻副产物形成聚合物,该聚合物收集在处理室组件上。随着时间的推移,积聚的聚合物将开始与腔室组件分离并沉积在晶圆上,从而阻止蚀刻并形成不完全的接触和通孔,从而导致器件故障。当出现这种现象时,需要彻底拆卸并清洁腔室(湿法清洁),然后才能再次接受处理晶圆的颗粒级。超过一半的时间是在处理1500个晶圆时或之前执行湿法清洁。

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