Influence of Ⅵ: Ⅱ ratio on the properties of MOCVD-grown ZnO thin films

摘要

We report on the impact the MOCVD Ⅵ: Ⅱratio during growth has on the properties of ZnO thin films grown on glass slides using diethyl zinc (DEZ) and tert-butanol (TBOH) as precursors. Our work displays the critical effect of this growth parameter on the defects located in the crystal lattice. Oxygen vacancies and other oxygen-induced defects are shown to affect the films' tensile strain, stress, grain size, bandgap structure, and dispersion properties.