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Wafer-Level Vacuum Packaging Technology Based on Selective Electroplating

机译:基于选择性电镀的晶圆级真空包装技术

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摘要

A novel concept for low-cost, wafer-level packaging of MEMS is proposed and applied to vacuum packaging of INO's 160x120 pixel uncooled bolometric focal plane arrays, FPAs, based on vanadium oxide thermistor material. A wafer-scale metallic tray composed of several tens of micropackages is electroplated by using the thick resist SU-8 as a micromold. FPA dies and infrared windows are then soldered to the main tray by flip-chip bonding. Contrary to the conventional wafer to wafer bonding approach, assembly and vacuum sealing steps are dissociated. For this purpose, each micropackage is equipped with a pump-out hole for outgassing under vacuum and at elevated temperature prior to vacuum sealing. The process flow for fabrication of micropackages is described. The influence of DC and pulse plating conditions on the stress and properties of deposited nickel packages was investigated. Results on the selective electroplating of indium solder on antireflection-coated IR window wafers and the formation of a solderable layer around the chip are presented.
机译:提出了低成本,晶圆级MEMS封装的新概念,并将其应用于基于钒氧化物热敏电阻材料的INO的160x120像素非冷却辐射热焦平面阵列FPA的真空封装。通过使用厚抗蚀剂SU-8作为微模具,电镀由数十个微封装组成的晶圆级金属托盘。然后通过倒装芯片键合将FPA裸片和红外窗口焊接到主托盘上。与常规的晶片到晶片键合方法相反,组装和真空密封步骤是分离的。为此,每个微包装都配有一个抽气孔,用于在真空密封之前在真空和高温下除气。描述了用于制造微封装的工艺流程。研究了直流和脉冲电镀条件对沉积的镍封装的应力和性能的影响。提出了在抗反射涂层的红外窗口晶片上选择性电镀铟焊料以及在芯片周围形成可焊层的结果。

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