Y_2O_3-based oxide phosphor thin-film electroluminescent devices

摘要

This article introduces newly developed multicomponent oxide host materials for electroluminescent phosphors. These are composed of Y_2O_3 and another binary compound such as A1_2O_3, Ga_2O_3, Gd_2O_3, In_2O_3, B_2O_3 or GeO_2. The various Mn-activated (Y_2O_3)_(1-x)-(oxide)_x phosphor thin films were deposited while varying the composition by r.f. magnetron sputtering and postannealed. The obtained electroluminescent and photoluminescent emissions from the ((Y_2O_3)_(1-x)-(oxide)_x):Mn phosphor thin-film emitting layers" were strongly dependent on the preparation and postannealing conditions as well as on the composition. The highest luminance and photoluminescent intensity were obtained by using a (Y_2O_3)_(1-x)-(oxide)_x:Mn thin-film emitting layer prepared with an optimized composition. Both the obtained electroluminescent and photoluminescent characteristics were correlated to the crystallinily of the thin-film emitting layers. High luminances above 7000 cd/m~2 were obtained in ((Y_2O_3)_(0.6)-(GeO_2)_(0.4)):Mn and ((Y_2O_3)_(0.5)-(Ga_2O_3)_(0.5)):Mn thin-film electroluminescent devices fabricated under optimal condition and driven by an ac sinusoidal wave voltage at 1 kHz.