High-luminance thin-film electroluminescent devices using Y2O3 : Mn phosphor

摘要

Mn-activated yttria (Y2O3:Mn) phosphor thin films, consisting of monoclinic Y2O3 host material, were prepared by r.f. magnetron sputtering. High-luminance yellow photoluminescence and electroluminescence emissions were obtained using Y2O3:Mn thin films prepared with a Mn content of 2 at.% at a substrate temperature of approximately 350 degreesC and postannealed at approximately 1020 degreesC in an Ar atmosphere. The obtainable electroluminescent (EL) characteristics of Y2O3:Mn thin-film EL (TFEL) devices were mainly related to the crystallinity of the thin-film emitting layers used in the devices. The obtained maximum luminance and luminous efficiency increased as the crystallinity of the monoclinic Y2O3:Mn thin-film emitting layers was improved. A luminance of 5110 cd/m(2) was obtained in a I kHz-driven TFEL device fabricated with monoclinic Y2O3:Mn phosphor thin film prepared under the optimized conditions. (C) 2003 Elsevier B.V. All rights reserved. [References: 18]