Very-high temperature (200°C) operation of GaN-based cascade green light emitting diode for plastic optical fiber communication

机译：GaN基级联绿色发光二极管在塑料光纤通信中的超高温（200°C）操作

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We demonstrate cascade green light-emitting-diodes, which greatly release trade-off between output-power and speed and exhibits strong modulation-speed enhancement with negligible output-power degradation from room-temperature to 200°C operation. 200Mbit/sec error-free transmission at 200°C can be achieved.

机译：我们演示了级联绿色发光二极管，该二极管极大地释放了输出功率和速度之间的权衡，并且在从室温到200°C的操作中，输出功率降级到可以忽略的程度，显示出强大的调制速度增强。可以在200°C下实现200Mbit / sec的无错误传输。

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《Conference on Optical Fiber Communication, collocated National Fiber Optic Engineers Conference;OFC/NFOEC》|2010年|P.1-3|共3页
会议地点 San Diego, CA(US);San Diego, CA(US)
作者
Shi, J.-W.; Huang, H.-W.; Kuo, F.-M.; Lee, M. L.; Sheu, J.-K.;
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Department of Electrical Engineering National Central University Taoyuan Taiwan;

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专利

1. Very-High Temperature (200 C) and High-Speed Operation of Cascade GaN-Based Green Light- Emitting Diodes With an InGaN Insertion Layer [J] . Shi J.-W., Huang H.-W., Kuo F.-M., Photonics Technology Letters, IEEE . 2010,第14期

机译：具有InGaN插入层的级联GaN基绿色发光二极管的超高温（200 C）和高速操作
2. The Improvement in Modulation Speed of GaN-Based Green Light-Emitting Diode (LED) by Use of n-Type Barrier Doping for Plastic Optical Fiber (POF) Communication [J] . J.-W. Shi, H.-Y. Huang, J.-K. Sheu, IEEE Photonics Technology Letters . 2006,第15期

机译：通过使用n型势垒掺杂进行塑料光纤（POF）通信来提高GaN基绿色发光二极管（LED）的调制速度
3. GaN-Based Miniaturized Cyan Light-Emitting Diodes on a Patterned Sapphire Substrate With Improved Fiber Coupling for Very High-Speed Plastic Optical Fiber Communication [J] . Wun J.-M., Lin C.-W., Chen W., Photonics Journal, IEEE . 2012,第5期

机译：具有改进的光纤耦合的图案化蓝宝石衬底上的基于GaN的微型青色发光二极管，用于超高速塑料光纤通信
4. Very-high temperature (200°C) operation of GaN-based cascade green light emitting diode for plastic optical fiber communication [C] . Shi J.-W., Huang H.-W., Kuo F.-M., 2010 Conference on Optical Fiber Communication, collocated National Fiber Optic Engineers Conference (OFC/NFOEC) . 2010

机译：GaN基级联绿色发光二极管在塑料光纤通信中的超高温（200°C）操作
5. Optically functional structures on GaN-based light-emitting diodes for light-extraction efficiency enhancement and emission pattern control. [D] . Ma, Ming. 2013

机译：GaN基发光二极管上的光学功能结构，用于提高光提取效率和控制发射模式。
6. The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes [O] . Shengjun Zhou, Xingtong Liu, Han Yan, -1

机译：纳米级V凹坑对GaN基绿色发光二极管的电子和光学特性以及效率下降的影响
7. 1 Very High-Speed GaN-Based Cyan Light Emitting Diode on Patterned Sapphire Substrate for 1 Gbps Plastic Optical Fiber Communication [O] . J. -w. Shi, Che-wei Lin, Wei Chen, 2016

机译：在图案化蓝宝石衬底上的1个超高速GaN基青色发光二极管，用于1 Gbps塑料光纤通信
8. THE COUPLING OF LIGHT FROM LIGHT-EMITTING DIODES INTO OPTICAL FIBERS: THE ANALYSIS OF CLOSE-COUPLING [R] . D. C. Johnson, B. S. Kawasaki 1974

机译：发光二极管光与光纤的耦合：近耦合分析

Very-high temperature (200°C) operation of GaN-based cascade green light emitting diode for plastic optical fiber communication

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