United Microelectronics Corporation No.18 Nanke 2nd Rd.,Tainan Science Park, Shinshih Dist.,Tainan City, Taiwan 741, ROC;
United Microelectronics Corporation No.18 Nanke 2nd Rd.,Tainan Science Park, Shinshih Dist.,Tainan City, Taiwan 741, ROC;
United Microelectronics Corporation No.18 Nanke 2nd Rd.,Tainan Science Park, Shinshih Dist.,Tainan City, Taiwan 741, ROC;
United Microelectronics Corporation No.18 Nanke 2nd Rd.,Tainan Science Park, Shinshih Dist.,Tainan City, Taiwan 741, ROC;
United Microelectronics Corporation No.18 Nanke 2nd Rd.,Tainan Science Park, Shinshih Dist.,Tainan City, Taiwan 741, ROC;
United Microelectronics Corporation No.18 Nanke 2nd Rd.,Tainan Science Park, Shinshih Dist.,Tainan City, Taiwan 741, ROC;
United Microelectronics Corporation No.18 Nanke 2nd Rd.,Tainan Science Park, Shinshih Dist.,Tainan City, Taiwan 741, ROC;
United Microelectronics Corporation No.18 Nanke 2nd Rd.,Tainan Science Park, Shinshih Dist.,Tainan City, Taiwan 741, ROC;
The Dow Chemical Company, Dow Electronic Materials No. 6, Kesi 2nd Rd., Jhunan, Miaoli, Hsinchu Science-based Industrial Park, Taiwan 35053, ROC.;
The Dow Chemical Company, Dow Electronic Materials No. 6, Kesi 2nd Rd., Jhunan, Miaoli, Hsinchu Science-based Industrial Park, Taiwan 35053, ROC.;
The Dow Chemical Company, Dow Electronic Materials No. 6, Kesi 2nd Rd., Jhunan, Miaoli, Hsinchu Science-based Industrial Park, Taiwan 35053, ROC.;
The Dow Chemical Company, Dow Electronic Materials 20, Samsung 1-Ro 5-Gil, Hwaseong, Gyeonggi-Do, 445-170, Korea;
The Dow Chemical Company, Dow Electronic Materials 20, Samsung 1-Ro 5-Gil, Hwaseong, Gyeonggi-Do, 445-170, Korea;
The Dow Chemical Company, Dow Electronic Materials 20, Samsung 1-Ro 5-Gil, Hwaseong, Gyeonggi-Do, 445-170, Korea;
The Dow Chemical Company, Dow Electronic Materials 2-24, Higashishinagawa 2-chome Shinagawa-ku, 140-8617, Japan;
The Dow Chemical Company, Dow Electronic Materials 455 Forest Street Marlborough, MA, 01752, U.S.A.;
Top-coatless 193nm immersion resist; logic application; positive tone development contact hole; CD uniformity; contact edge roughness and defect;
机译:193nm阻性聚合物的分子量对负色显影过程的影响
机译:193nm阻性聚合物的分子量对负色显影过程的影响
机译:PDMS的选择性蚀刻:用作正型抗蚀剂的蚀刻技术
机译:顶层193NM正色调开发浸泡抗蚀剂逻辑应用
机译:低成本直流电阻率计的人道主义地球物理应用的开发与验证
机译:采用纯CMOS逻辑工艺的具有自抑制电阻切换负载的RRAM集成4T SRAM
机译:开发用于193nm浸没式光刻的高折射率抗蚀剂
机译:氨基二硅烷作为甲硅烷基化剂,用于干法显影的正极性抗蚀剂,用于极紫外(13.5)微光刻