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Patterning sub-25nm half-pitch hexagonal arrays of contact holes with chemo-epitaxial DSA guided by ArFi pre-patterns

机译:由ArFi预图案引导的化学外延DSA对接触孔的亚25nm半间距六角形六边形阵列进行构图

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The patterning potential of block copolymer (BCP) materials via various directed self-assembly (DSA) schemes has been demonstrated for over a decade. We have previously reported the HONEYCOMB flow; a process flow where we utilize Extreme Ultraviolet Lithography and Oxygen plasma to guide the assembly of cylindrical phase BCPs into regular hexagonal arrays of contact holes. In this work we report the development of a new process flow, the CHIPS flow, where we use ArFi lithography to print guiding patterns for the chemo-epitaxial DSA of BCPs. Using this process flow we demonstrate BCP assembly into hexagonal arrays with sub-25 nm half-pitch and discuss critical steps of the process flow. Additionally, we discuss the influence of under-layer surface energy on the DSA process window and report contact hole metrology results.
机译:通过各种定向自组装(DSA)方案,嵌段共聚物(BCP)材料的图案化潜力已被证明了十多年。我们之前已经报告了HONEYCOMB流程;我们利用极紫外光刻和氧气等离子体引导圆柱相BCP组装成规则的六边形接触孔阵列的工艺流程。在这项工作中,我们报告了新工艺流程CHIPS流程的开发情况,在该流程中,我们使用ArFi光刻技术为BCP的化学外延DSA打印指导图案。使用该流程,我们演示了BCP组装成半间距小于25 nm的六边形阵列的情况,并讨论了流程的关键步骤。此外,我们讨论了底层表面能对DSA工艺窗口的影响,并报告了接触孔的计量结果。

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