Carrier Quantization in SOI MOSFETs using an Effective Potential Based Monte-Carlo Tool

摘要

This paper discusses the numerical implementation and assesses the validity limits of the effective potential approach used to include quantum mechanical effects in semi-classical Full-Band Monte Carlo simulations. Results on thin-body fully-depleted SOI MOSFETs are reported. It is shown that the model grasps with reasonable accuracy the quantum mechanical reduction of the inversion charge, but fails to provide an accurate description of the charge distribution in proximity of the Si/SiO_2 barrier.