An InGaP/GaAs Resonant-Tunnelling Bipolar Transistor (RTBT) with Multiple Negative-Differential-Resistance (MNDR) Phenomena

摘要

An InGaP/GaAs resonant tunnelling bipolar transistor (RTBT) with superlattice (SL) in the emitters is fabricated and studied. The modulated widths of SL barriers are utilized in the specific SL structure. Based on the calculations; the ground state and first excited state mini bands are estimated from the transmission probability; The electron transport of RT through SL structure is significantly determined by the electric field behaviors across SL barriers. Experimentally, the excellent transistor characteristics including the small saturation voltage, small offset voltage, high breakdown voltages are obtained due to the insertion of δ-doping sheet at the base-collector heterointerface. Furthermore, at higher current regimes, the quaternary negative difference resistance (NDR) phenomena are observed in agreement with the theoretical prediction at 300K.